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Samsung 860 QVO internal solid state drive 2.5" 1000 GB Serial ATA III V-NAND MLC

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Samsung 860 QVO internal solid state drive 2.5" 2000 GB Serial ATA III MLC

Samsung 860 DCT internal solid state drive 2.5" 1920 GB Serial ATA III MLC

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Part No: MZ-76E1T9E

V-NAND Technology
Samsung's V-NAND flash memory helps to overcome the limitations of conventional planar NAND architecture. It stacks 48 cell layers vertically over one another rather than trying to fit itself onto a fixed horizontal space, in order to provide high density and performance with a small footprint.

Optimized Performance & Value
Built to handle the heavier workloads of data center usage, the 860DCT delivers a high level of sustained performance at a great value for your business.

Outstanding Reliability
The 860DCT 1.9TB is optimized for server and data center environments by offering reinforced endurance, low power consumption and a 3-year limited warranty up to 698 TBW.

Data Protection for Peace of Mind
Secure data without performance degradation thanks to AES 256-bit encryption.

Efficient Power Management
Thanks to low power consumption, you can enhance efficiency for operations and maintenance.

S.M.A.R.T.
Monitor the computer drives proactively to detect and report various reliability indicators with Self-Monitoring, Analysis and Reporting Technology (S.M.A.R.T).

Samsung Components
Samsung's solid state drives are built entirely from Samsung components, leveraging our extensive OEM expertise to allow complete, optimized integration.

Availability: In stock

Excl. Tax: £310.62 Incl. Tax: £372.74


Details

SSD capacity 1920 GB
Memory type MLC
Data transmission
Random write (4KB) 19000 IOPS
Random read (4KB) 98000 IOPS
Data transfer rate 6 Gbit/s
Security
Security algorithms 256-bit AES
Endurance
Mean time between failures (MTBF) 1500000 h
Performance
Interface Serial ATA III
Component for Server/workstation
Controller type Samsung MJX
NVMe No
Sequential write speed (AS SSD) 520 MB/s
Sequential read speed (AS SSD) 550 MB/s
NAND flash type MLC (Multi Level Cell)
Active garbage collection Yes
TBW rating 698
SSD capacity 1920 GB
Security algorithms 256-bit AES
S.M.A.R.T. support Yes
TRIM support Yes
Memory type MLC
Random write (4KB) 19000 IOPS
Random read (4KB) 98000 IOPS
Mean time between failures (MTBF) 1500000 h
Data transfer rate 6 Gbit/s
Design
Component for Server/workstation
Product colour Black
SSD form factor 2.5"
Features
Interface Serial ATA III
Component for Server/workstation
Controller type Samsung MJX
NVMe No
Sequential write speed (AS SSD) 520 MB/s
Sequential read speed (AS SSD) 550 MB/s
NAND flash type MLC (Multi Level Cell)
Active garbage collection Yes
TBW rating 698
SSD capacity 1920 GB
Security algorithms 256-bit AES
S.M.A.R.T. support Yes
TRIM support Yes
Memory type MLC
Random write (4KB) 19000 IOPS
Random read (4KB) 98000 IOPS
Mean time between failures (MTBF) 1500000 h
Data transfer rate 6 Gbit/s
SSD form factor 2.5"
Power
Power consumption (write) 2.95 W
Power consumption (read) 2.02 W
Power consumption (idle) 1.05 W
Operational conditions
Operating temperature (T-T) 0 - 70 °C
Storage temperature (T-T) -40 - 85 °C
Operating relative humidity (H-H) 5 - 95%
Storage relative humidity (H-H) 5 - 95%
Operating shock 1500 G
Non-operating shock 1500 G
Non-operating vibration 20 G
Technical details
Interface Serial ATA III
S.M.A.R.T. support Yes
Operating temperature (T-T) 0 - 70 °C
TRIM support Yes
Storage temperature (T-T) -40 - 85 °C
Operating relative humidity (H-H) 5 - 95%
Storage relative humidity (H-H) 5 - 95%
Operating shock 1500 G
Non-operating shock 1500 G
Non-operating vibration 20 G
Product colour Black
SSD form factor 2.5"
Weight & dimensions
Width 100.1 mm
Weight 60 g
Height 6.9 mm
Depth 69.9 mm
Other features
Product colour Black

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Additional Information

SKU MZ-76E1T9E
Manufacturer Samsung
EAN No
Specification No
Reviews No
PDF Url No
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