020 8610 0500 Search
My Cart£0.00
Navigation

Product was successfully added to your shopping cart.
Previous

Samsung SM883 internal solid state drive 2.5" 3840 GB Serial ATA III MLC

Previous

Samsung 860 EVO internal solid state drive 2.5" 250 GB Serial ATA III MLC

Samsung MZ-V6E1T0 internal solid state drive M.2 1000 GB PCI Express V-NAND NVMe

Be the first to review this product

Part No: MZ-V6E1T0BW

Discover the next advancement in SSD technology with our high-performance, highly reliable 960 EVO Series NVMe M.2 SSDs. Non-Volatile Memory Express (NVMe) with a new Polaris controller outperforms our SATA SSDs with exceptionally fast read/write speeds, and Samsung TurboWrite technology accelerates write speeds even further. Samsung's Magician software solution provides advanced functionality to manage, monitor and optimize drive performance.

Raise your performance expectations
Enhanced bandwidth beyond the SATA interface provided by the NVMe interface, combined with the new Polaris controller facilitates sequential Read/Write speeds up to 3,200 MB/s and 1,800 MB/s respectively. Plus, the new Intelligent TurboWrite technology accelerates write speeds even further.

Rest easy with solid reliability
The 960 EVO holds its own by boasting up to 200 TBW* for the 500GB capacity model and is backed by a 3-year limited warranty. Dynamic Thermal Guard prevents overheating, protecting your data and ensuring optimal performance.
*TBW : Terabytes Written

Availability: In stock

Excl. Tax: £291.14 Incl. Tax: £349.37


Details

Hard drive
PCI Express interface data lanes x4
SSD capacity 1000 GB
Memory type V-NAND
Data transmission
Read speed 3200 MB/s
Write speed 1900 MB/s
Random write (4KB) 360000 IOPS
Security
Security algorithms 256-bit AES
Endurance
Mean time between failures (MTBF) 1500000 h
Performance
Interface PCI Express
Maximum write (4KB) 360000 IOPS
Maximum read (4KB) 380000 IOPS
Controller type Samsung Polaris
NVMe Yes
NVMe version 1.2
PCI Express interface data lanes x4
SSD capacity 1000 GB
Security algorithms 256-bit AES
S.M.A.R.T. support Yes
Read speed 3200 MB/s
TRIM support Yes
Write speed 1900 MB/s
Memory type V-NAND
Random write (4KB) 360000 IOPS
Mean time between failures (MTBF) 1500000 h
Hardware encryption Yes
Design
Protection features Shock resistant
Product colour Black
SSD form factor M.2
Features
Interface PCI Express
Maximum write (4KB) 360000 IOPS
Maximum read (4KB) 380000 IOPS
Controller type Samsung Polaris
NVMe Yes
NVMe version 1.2
PCI Express interface data lanes x4
SSD capacity 1000 GB
Security algorithms 256-bit AES
S.M.A.R.T. support Yes
Read speed 3200 MB/s
TRIM support Yes
Write speed 1900 MB/s
Protection features Shock resistant
Memory type V-NAND
Random write (4KB) 360000 IOPS
Mean time between failures (MTBF) 1500000 h
Hardware encryption Yes
SSD form factor M.2
Power
Power consumption (average) 5.7 W
Operational conditions
Operating temperature (T-T) 0 - 70 °C
Storage temperature (T-T) -40 - 85 °C
Operating relative humidity (H-H) 5 - 95%
Storage relative humidity (H-H) 5 - 95%
Operating shock 1500 G
Technical details
Interface PCI Express
S.M.A.R.T. support Yes
Operating temperature (T-T) 0 - 70 °C
TRIM support Yes
Storage temperature (T-T) -40 - 85 °C
Protection features Shock resistant
Operating relative humidity (H-H) 5 - 95%
Storage relative humidity (H-H) 5 - 95%
Operating shock 1500 G
Hardware encryption Yes
Product colour Black
SSD form factor M.2
Launch date 2/14/2017
Weight & dimensions
Width 80.2 mm
Weight 8 g
Height 2.38 mm
Depth 22.1 mm
Other features
Product colour Black
Launch date 2/14/2017

Additional Information

SKU MZ-V6E1T0BW
Manufacturer Samsung
EAN No
Specification No
Reviews No
PDF Url No
  1. Be the first to review this product

Write Your Own Review

How do you rate this product? *

  1 star 2 stars 3 stars 4 stars 5 stars
Quality
Price
Value

This is custom tab. You can add custom tab as an attribute for entire products, or for each categories. You can add CMS content such as sizing guide or videos to enhance product detail.