020 8610 0500 Search
Links
My Cart£0.00
Navigation
  • Home
  • Other Brands
  • Samsung MZ-V7S1T0 internal solid state drive M.2 1000 GB PCI Express 3.0 V-NAND MLC NVMe

Product was successfully added to your shopping cart.
Samsung MZ-V7S1T0 internal solid state drive M.2 1000 GB PCI Express 3.0 V-NAND MLC NVMe Samsung MZ-V7S1T0 internal solid state drive M.2 1000 GB PCI Express 3.0 V-NAND MLC NVMe
Previous

Samsung 860 QVO internal solid state drive 2.5" 2000 GB Serial ATA III MLC

Previous

Samsung 850 EVO internal solid state drive 2.5" 4000 GB Serial ATA III MLC

Samsung MZ-V7S1T0 internal solid state drive M.2 1000 GB PCI Express 3.0 V-NAND MLC NVMe

Be the first to review this product

Part No: MZ-V7S1T0BW

Always Evolving SSD
The ultimate in performance, upgraded. Faster than the 970 EVO, the 970 EVO Plus is powered by the latest V-NAND technology and firmware optimisation. It maximises the potential of NVMe bandwidth for unbeatable computing in capacities up to 2TB, with reliability of up to 1,200 TBW.

Level Up Performance
The 970 EVO Plus reaches sequential read/write speeds up to 3,500/3,300 MB/s, up to 53%‡ faster than the 970 EVO. The latest V-NAND—which brings greater NAND performance and higher power efficiency—along with optimised firmware, a proven Phoenix controller and Intelligent TurboWrite boost.

Availability: In stock

Excl. Tax: £184.58 Incl. Tax: £221.50


Details

Hard drive
PCI Express interface data lanes x4
SSD capacity 1000 GB
Memory type V-NAND MLC
Data transmission
Read speed 3500 MB/s
Write speed 3300 MB/s
Random write (4KB) 550000 IOPS
Random read (4KB) 600000 IOPS
Security
Security algorithms 256-bit AES
Endurance
Mean time between failures (MTBF) 1500000 h
Performance
Interface PCI Express 3.0
Component for PC
Controller type Samsung Phoenix
NVMe Yes
NVMe version 1.3
DevSlp (device sleep) support Yes
PCI Express interface data lanes x4
SSD capacity 1000 GB
Security algorithms 256-bit AES
S.M.A.R.T. support Yes
Read speed 3500 MB/s
TRIM support Yes
Write speed 3300 MB/s
Memory type V-NAND MLC
Random write (4KB) 550000 IOPS
Random read (4KB) 600000 IOPS
Mean time between failures (MTBF) 1500000 h
Hardware encryption Yes
Design
Component for PC
SSD form factor M.2
Features
Interface PCI Express 3.0
Component for PC
Controller type Samsung Phoenix
NVMe Yes
NVMe version 1.3
DevSlp (device sleep) support Yes
PCI Express interface data lanes x4
SSD capacity 1000 GB
Security algorithms 256-bit AES
S.M.A.R.T. support Yes
Read speed 3500 MB/s
TRIM support Yes
Write speed 3300 MB/s
Memory type V-NAND MLC
Random write (4KB) 550000 IOPS
Random read (4KB) 600000 IOPS
Mean time between failures (MTBF) 1500000 h
Hardware encryption Yes
SSD form factor M.2
Power
Power consumption (average) 6 W
Power consumption (max) 9 W
Power consumption (idle) 0.003 W
Operating voltage 3.3 V
Operational conditions
Operating temperature (T-T) 0 - 70 °C
Technical details
Interface PCI Express 3.0
S.M.A.R.T. support Yes
Operating temperature (T-T) 0 - 70 °C
TRIM support Yes
Hardware encryption Yes
SSD form factor M.2
Launch date 1/22/2019
Software
Bundled software Magician Software for SSD management
Weight & dimensions
Package type Box
Width 80.2 mm
Weight 8 g
Height 22.1 mm
Depth 2.38 mm
Packaging data
Package type Box
Bundled software Magician Software for SSD management
Packaging content
Bundled software Magician Software for SSD management
Other features
Launch date 1/22/2019

Additional Information

SKU MZ-V7S1T0BW
Manufacturer Samsung
EAN No
Specification No
Reviews No
PDF Url No
  1. Be the first to review this product

Write Your Own Review

How do you rate this product? *

  1 star 2 stars 3 stars 4 stars 5 stars
Quality
Price
Value

This is custom tab. You can add custom tab as an attribute for entire products, or for each categories. You can add CMS content such as sizing guide or videos to enhance product detail.

Information

Why buy from us

My account

Company working hours

Brook House, 54A Cowley Mill Road, Uxbridge UB8 2FX

visaMaster

© Copyright 2018, Rahberenterprise.com